用磁控溅射法制备铜钨合金薄膜, 采用能谱仪、X射线衍射仪、透射和扫描电镜、电阻计和显微硬度仪等对合金薄膜的成分、结构和性能进行了表征, 探讨了钨原子分数的影响。结果表明: 含原子分数31.8%~54.8%钨的铜钨膜呈非晶态, 表面较平整; 含18%和60%钨的膜为晶态, 且出现固溶度扩展, 分别存在fcc Cu(W)亚稳过饱和固溶体和bcc W(Cu)固溶体, 铜钨膜电阻率高于纯铜膜的, 非晶铜钨膜电阻率较晶态膜高1.9倍以上; 铜钨膜硬度与钨含量呈正相关, 非晶及晶态铜钨膜硬度分别低于和略高于Voigt公式的计算值。
所属栏目
云南省自然科学基金重点资助项目(2004E0004Z); 国家自然科学基金资助项目(50871049); 云南省教育厅科学研究基金资助项目(09Y0091)
收稿日期
2010/2/262010/11/18
作者单位
郭中正:昆明理工大学云南省新材料制备与加工重点实验室, 昆明 650093
孙勇:昆明理工大学云南省新材料制备与加工重点实验室, 昆明 650093
周铖:昆明理工大学云南省新材料制备与加工重点实验室, 昆明 650093
段永华:昆明理工大学云南省新材料制备与加工重点实验室, 昆明 650093
彭明军:昆明理工大学云南省新材料制备与加工重点实验室, 昆明 650093
备注
郭中正(1983-), 男, 贵州安顺人, 博士研究生。
引用该论文:
GUO Zhong-zheng,SUN Yong,ZHOU Cheng,DUAN Yong-hua,PENG Ming-jun.Influence of W Content on Structure and Properties of Cu-W Alloy Thin Films Deposited by Magnetron Sputtering[J].Materials for mechancial engineering,2011,35(4):20～24
郭中正,孙勇,周铖,段永华,彭明军.钨含量对磁控溅射铜钨合金薄膜结构和性能的影响[J].机械工程材料,2011,35(4):20～24
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